Précédent
Suivant
Brevet : EP1561239 - PROCEDES DE DEPOT DE COUCHE ATOMIQUE
Titre
PROCEDES DE DEPOT DE COUCHE ATOMIQUE
N° et date de publication de la demande
EP1561239 - 10/08/2005
Type de la demande
A2
N° et date de dépôt
EP03783399.3 - 12/11/2003
N° et date de priorité
US29307202 - 12/11/2002
Classification CIB
H01L 21/285 ; C23C 16/38 ; C23C 16/40 ; C23C 16/44 ; C23C 16/455 ; H01L 21/314 ; H01L 21/316 ; H01L 21/768
Classification CPC
C23C 16/38 ; C23C 16/403 ; C23C 16/45542 ; C23C 16/515 ; H01L 21/28562 ; H01L 21/76841 ; H01L 21/02274 ; H01L 21/02183 ; H01L 21/02186 ; H01L 21/0228 ; H01L 21/02205 ; H01L 21/02178 ; H01L 21/20 ; H01L 21/02183 ; H01L 21/0228 ; H01L 21/02205 ; H01L 21/02178 ; H01L 21/02274 ; H01L 21/02186 ; H01L 21/3141 ; H01L 21/31616 ; H01L 21/31683 ; H01L 21/02274 ; H01L 21/0228 ; H01L 21/02205 ; H01L 21/02178 ; H01L 21/02183 ; H01L 21/02186 ; C23C 16/45542 ; C23C 16/38 ; H01L 21/76841 ; C23C 16/403 ; H01L 21/28562 ; C23C 16/515
Famille de brevets
KR20050074581A ; KR20060105006A ; US2006029738A1 ; US2005260854A1 ; WO2004044963A2 ; AU2003290815A1 ; TW200424350A ; US2006172534A1 ; ATE507579T1 ; JP2006505696A ; US2004092132A1 ; CN1739188A ; KR20060110378A ; EP1561239A2
Abrégé
A first precursor gas is flowed to the substrate within the chamber effective to form a first monolayer on the substrate. A second precursor gas different in composition from the first precursor gas is flowed to the first monolayer within the chamber under surface microwave plasma conditions within the chamber effective to react with the first monolayer and form a second monolayer on the substrate which is different in composition from the first monolayer. The second monolayer includes components of the first monolayer and the second precursor. In one implementation, the first and second precursor flowings are successively repeated effective to form a mass of material on the substrate of the second monolayer composition. Additional and other implementations are contemplated.
INTERVENANTS
Déposant
MICRON TECHNOLOGY INC (MICRON TECHNOLOGY, INC.) - US
Titulaire
MICRON TECHNOLOGY, INC. - 8000 SOUTH FEDERAL WAY, MS 525 BOISE, ID 83716 - US
Inventeur
DOAN, TRUNG, TRI LOS GATON, CA 95032 - US
BLALOCK, GUY, T. EAGLE, ID 83616 - US
SANDHU, GURTEJ, S. BOISE, ID 83706 - US
Mandataire
MARKS & CLERK - ALPHA TOWER SUFFOLK STREET QUEENSWAY BIRMINGHAM B1 1TT - GB
STATUT EN FRANCE : Déchu
Délivrance
27/04/2011
Date de constatation de déchéance
-
31/07/2012 (BOPI 2012-33)
Date de paiement de la prochaine annuité
30/11/2011
